Mitsubishi 2SC2097
The Mitsubishi 2SC2097 is a 12Volt epitaxial silicon NPN planar transistor designed primarily for RF power amplifiers in HF band mobile radio applications.
Specifications:
- 30 Mhz
- 12 Volts
- P-out = 175 Watt
- Gpe = 12,3 dB
- Emmiter ballasted construction for good perfomances
- Low thermal resistance cramic package with flange
Package:
- 1 x Mitsubishi 2SC2097
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Mitsubishi 2SC2097
Mitsubishi 2SC2097
The Mitsubishi 2SC2097 is a 12Volt epitaxial silicon NPN planar transistor designed primarily for RF power amplifiers in HF band mobile radio applications.
Specifications:
- 30 Mhz
- 12 Volts
- P-out = 175 Watt
- Gpe = 12,3 dB
- Emmiter ballasted construction for good perfomances
- Low thermal resistance cramic package with flange
Package:
- 1 x Mitsubishi 2SC2097
Origineel: $58.51
-65%$58.51
$20.48Productinformatie
Productinformatie
Verzending & Retourneren
Verzending & Retourneren
Description
The Mitsubishi 2SC2097 is a 12Volt epitaxial silicon NPN planar transistor designed primarily for RF power amplifiers in HF band mobile radio applications.
Specifications:
- 30 Mhz
- 12 Volts
- P-out = 175 Watt
- Gpe = 12,3 dB
- Emmiter ballasted construction for good perfomances
- Low thermal resistance cramic package with flange
Package:
- 1 x Mitsubishi 2SC2097





















